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| FUJITSU SEMICONDUCTOR NEW PRODUCTS NP05-11411-2E 64Mbit SDR I/F FCRAMTM C onsum er/E m bedded A pplication S pecific M em ory for S iP MB81ES653225-12/-12L (Now developing) s FEATURES * * * * * * * * * * * * * * * * * * 1M words x 32 bits x 2 banks Organization Low Power Supply (VDD = VDDQ = 1.8 V 0.15 V) 1.8 V CMOS I/O Interface 8K Refresh Cycles every 32 ms Auto- and Self- Refresh 2 Banks Operation Programmable Burst Type, Burst Length, and CAS Latency Burst Read/Write Operation and Burst Read/Single Write Operation Capability Programmable Page Length Programmable Partial Array Self Refresh (PASR) Programmable Temperature Compensated Self Refresh (TCSR) Deep Power Down Mode Extended Temperature Operation MB81ES653225-12 : 0 C to 85 C MB81ES653225-12L : -25 C to 85 C CKE Power Down Mode Byte Control Capability by Data Mask (DQM) FCRAM Disable Function for TEST FCRAM Self Burn-in Function for TEST FCRAM BIST (Built In Self Test) Function for TEST s PRODUCT OPTIONS Part Number Speed Version Clock Frequency (Max) Burst Mode Cycle Time (Min) Access Time from Clock (Max) CL= 2 CL= 3 CL= 2 CL= 3 CL= 2 CL= 3 MB81ES653225 12 54 MHz 85 MHz 18.5 ns 11.7 ns 12 ns 8.7 ns 12L August, 2003 1/1 |
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